Справочник IGBT. OST50N65HSNF

 

OST50N65HSNF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST50N65HSNF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 53.6 nS
   Coesⓘ - Выходная емкость, типовая: 184 pF
   Qg ⓘ - Общий заряд затвора, typ: 108.7 nC
   Тип корпуса: TO247
 

 Аналог (замена) для OST50N65HSNF

   - подбор ⓘ IGBT транзистора по параметрам

 

OST50N65HSNF Datasheet (PDF)

 ..1. Size:752K  oriental semi
 ost50n65hsnf.pdf pdf_icon

OST50N65HSNF

OST50N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:747K  oriental semi
 ost50n65hszf.pdf pdf_icon

OST50N65HSNF

OST50N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST50N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:732K  oriental semi
 ost50n65hmf.pdf pdf_icon

OST50N65HSNF

OST50N65HMF Enhancement Mode N-Channel Power IGBT General Description OST50N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:535K  oriental semi
 ost50n65hf-d.pdf pdf_icon

OST50N65HSNF

OST50N65HF-D Enhancement Mode N-Channel Power IGBT General Description OST50N65HF-D uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... OST40N65KMF , OST40N65PMF , OST50N65H4EWF , OST50N65HEWF , OST50N65HF , OST50N65HF-D , OST50N65HM2F , OST50N65HMF , IKW40N65WR5 , OST50N65HSZF , OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , OST60N65HMF , OST60N65HSMF , OST60N65HSXF .

History: MIXA40W1200TML | FF150R12RT4 | APT30GT60BRG | MITA15WB1200TMH | MPMC200B120RH | RGT50NL65D

 

 
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