IXGH60N60 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IXGH60N60 Specs and Replacement

The IXGH60N60 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for industrial applications requiring fast switching and high efficiency. Rated at 600V and 75A @25C, it combines the low conduction losses of a MOSFET with the high-current capability of a bipolar transistor. Featuring a robust gate structure and optimized thermal performance, the IXGH60N60 ensures reliable operation in inverters, motor drives, power supplies. Its fast switching speed minimizes energy losses, while its rugged design provides high short-circuit withstand and excellent avalanche capability, making it suitable for demanding power electronics applications.

   Type Designator: IXGH60N60
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 290 pF
   Package: TO247

IXGH60N60 Substitution

- IGBT ⓘ Cross-Reference Search

IXGH60N60 datasheet

..1. Size:94K ixys
ixgh60n60.pdf pdf_icon

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C, ... See More ⇒

..2. Size:95K ixys
ixgh60n60 ixgk60n60 ixgt60n60.pdf pdf_icon

0.1. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf pdf_icon

Advance Technical Data VCES = 600 V IXGH 60N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 60N60C2 VCE(sat) = 2.5 V tfi typ = 35 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E TO-268 IC25 TC = 25 C (limited by... See More ⇒

0.2. Size:163K ixys
ixgh60n60c3.pdf pdf_icon

GenX3TM 600V VCES = 600V IXGH60N60C3 IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50ns High Speed PT IGBT for 40-100kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient 30 V IC25 TC = 25 C (Limited by Leads) 75 A G ... See More ⇒