IXGH60N60
IGBT. Datasheet pdf. Equivalent
Type Designator: IXGH60N60
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 300
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 75
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7(max)
V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5
V
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 25
nS
Coesⓘ - Output Capacitance, typ: 290
pF
Qgⓘ -
Total Gate Charge, typ: 130
nC
Package:
TO247
IXGH60N60
Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGH60N60
Datasheet (PDF)
..1. Size:94K ixys
ixgh60n60.pdf 
VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,
..2. Size:95K ixys
ixgh60n60 ixgk60n60 ixgt60n60.pdf
VCES = 600 VUltra-Low VCE(sat) IGBT IXGH 60N60IC25 = 75 AIXGK 60N60 VCE(sat) = 1.7 VIXGT 60N60Symbol Test Conditions Maximum RatingsTO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268IC25 TC = 25C, limited by leads 75 A(IXGT)IC90 TC = 90C60 AGEICM TC = 25C,
0.1. Size:583K ixys
ixgh60n60c2 ixgt60n60c2.pdf
Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
0.2. Size:163K ixys
ixgh60n60c3.pdf
GenX3TM 600V VCES = 600VIXGH60N60C3IGBT IC110 = 60A VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBT for40-100kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient 30 VIC25 TC = 25C (Limited by Leads) 75 AG
0.3. Size:284K ixys
ixgh60n60c3d1 ixgt60n60c3d1.pdf
VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1 IC110 = 60Awith Diode IXGT60N60C3D1**Obsolete Part Number VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGE
0.4. Size:236K ixys
ixgh60n60c3d1.pdf
VCES = 600VGenX3TM 600V IGBTs IXGH60N60C3D1IC110 = 60Awith Diode IXGT60N60C3D1 VCE(sat) 2.5V tfi (typ) = 50nsHigh Speed PT IGBTs for40-100kHz switchingTO-247 (IXGH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VCC (Tab)EVGES Continuous 20 VVGEM Transient 30 VIC25
0.5. Size:581K ixys
ixgh60n60c2.pdf
Advance Technical DataVCES = 600 VIXGH 60N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 60N60C2VCE(sat) = 2.5 Vtfi typ = 35 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
0.6. Size:576K ixys
ixgh60n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 60N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 60N60B2VCE(sat)
0.7. Size:578K ixys
ixgh60n60b2 ixgt60n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 60N60B2HiPerFASTTM IGBTIC25 = 75 AIXGT 60N60B2VCE(sat)
Datasheet: IXGH40N30
, IXGH40N30S
, IXGH40N30A
, IXGH40N30B
, IXGH40N30BD1
, IXGH41N60
, IXGH50N60A
, IXGH50N60B
, IHW40T60
, IXGK120N60B
, IXGK50N50BU1
, IXGK50N60AU1
, IXGK50N60B
, IXGK50N60BD1
, IXGK50N60BU1
, IXGK60N60
, IXGK80N60A
.
