OST75N120HM2F Datasheet and Replacement
Type Designator: OST75N120HM2F
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ -
Maximum Power Dissipation: 536
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic| ⓘ - Maximum Collector Current: 90
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.75
V @25℃
Tj ⓘ -
Maximum Junction Temperature: 175
℃
tr ⓘ - Rise Time, typ: 119
nS
Coesⓘ - Output Capacitance, typ: 186
pF
Package:
TO247
OST75N120HM2F substitution
-
IGBT ⓘ Cross-Reference Search
OST75N120HM2F Datasheet (PDF)
..1. Size:793K oriental semi
ost75n120hm2f.pdf 
OST75N120HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N120HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
8.1. Size:741K oriental semi
ost75n65hnf.pdf
OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
8.3. Size:741K oriental semi
ost75n65htnf.pdf
OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.4. Size:768K oriental semi
ost75n65hsxf.pdf
OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.5. Size:788K oriental semi
ost75n65hemf.pdf
OST75N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.6. Size:805K oriental semi
ost75n65hm2f.pdf
OST75N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.7. Size:747K oriental semi
ost75n65hsvf.pdf
OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.8. Size:751K oriental semi
ost75n65hszf.pdf
OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.9. Size:608K oriental semi
ost75n65hem2f.pdf
OST75N65HEM2F Enhancement Mode N-Channel Power IGBT General Description OST75N65HEM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
8.10. Size:822K oriental semi
ost75n65hzf.pdf
OST75N65HZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
8.11. Size:801K oriental semi
ost75n65hsnf.pdf
OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.12. Size:768K oriental semi
ost75n65hmf.pdf
OST75N65HMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
8.13. Size:772K oriental semi
ost75n65hsmf.pdf
OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
8.14. Size:777K oriental semi
ost75n65hlmf.pdf
OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Datasheet: APT20GN60BG
, APT20GN60KG
, APT20GN60SG
, AOK20B60D1
, F3L30R06W1E3_B11
, WGW15G120N
, WGW15G120W
, IRG4MC50U
, IKW30N60H3
, AOB10B60D
, AOK10B60D
, AOT10B60D
, NGB8207AB
, NGB8207B
, AOB15B60D
, IRGSL8B60K
, AOK15B60D
.
History: SII200N06
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