2SH26 Datasheet and Replacement
Type Designator: 2SH26
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 50 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 140 nS
Package: TO220AB
2SH26 substitution
2SH26 Datasheet (PDF)
2sh26.pdf

2SH26Silicon N Channel IGBTHigh Speed Power SwitchingADE-208-788A(Z)2nd. EditionMay 1999Features High speed switching Low on-voltageOutlineTO220ABCG121. GateE32. Collector (Flange)3. Emitter2SH26Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to Emitter voltage VCES 600 VGate to Emitter voltage VGES 20 VColle
Datasheet: 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 , FGL60N100BNTD , 2SH27 , 2SH28 , 2SH29 , 2SH30 , 2SH31 , HCKZ75N65BH2 , IGC07T120T8L , IGC07T120T6L .
History: SKM500GA123D | IXBH40N160 | FGB3040G2-F085 | APT64GA90LD30
Keywords - 2SH26 transistor datasheet
2SH26 cross reference
2SH26 equivalent finder
2SH26 lookup
2SH26 substitution
2SH26 replacement
History: SKM500GA123D | IXBH40N160 | FGB3040G2-F085 | APT64GA90LD30



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