OST75N65HSZF IGBT. Datasheet pdf. Equivalent
Type Designator: OST75N65HSZF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 560 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 90 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 125 nS
Coesⓘ - Output Capacitance, typ: 1939 pF
Package: TO247
OST75N65HSZF Transistor Equivalent Substitute - IGBT Cross-Reference Search
OST75N65HSZF Datasheet (PDF)
ost75n65hszf.pdf
OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsxf.pdf
OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsvf.pdf
OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsnf.pdf
OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost75n65hsmf.pdf
OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Datasheet: OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , OST75N65HSMF , OST75N65HSNF , OST75N65HSVF , OST75N65HSXF , GT50JR22 , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F .
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