Справочник IGBT. OST75N65HSZF

 

OST75N65HSZF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST75N65HSZF
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 560
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 90
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.5
   Максимальная температура перехода (Tj), ℃: 175
   Время нарастания типовое (tr), nS: 125
   Емкость коллектора типовая (Cc), pf: 1939
   Тип корпуса: TO247

 Аналог (замена) для OST75N65HSZF

 

 

OST75N65HSZF Datasheet (PDF)

 ..1. Size:751K  oriental semi
 ost75n65hszf.pdf

OST75N65HSZF OST75N65HSZF

OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:777K  oriental semi
 ost75n65hswf.pdf

OST75N65HSZF OST75N65HSZF

 4.2. Size:768K  oriental semi
 ost75n65hsxf.pdf

OST75N65HSZF OST75N65HSZF

OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.3. Size:747K  oriental semi
 ost75n65hsvf.pdf

OST75N65HSZF OST75N65HSZF

OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.4. Size:801K  oriental semi
 ost75n65hsnf.pdf

OST75N65HSZF OST75N65HSZF

OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.5. Size:772K  oriental semi
 ost75n65hsmf.pdf

OST75N65HSZF OST75N65HSZF

OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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