OSC80N65HF Datasheet and Replacement
Type Designator: OSC80N65HF
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 114 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 112 nS
Coesⓘ - Output Capacitance, typ: 2978 pF
Package: TO247
OSC80N65HF substitution
OSC80N65HF Datasheet (PDF)
osc80n65hf.pdf
OSC80N65HF Enhancement Mode N-Channel Power IGBT General Description OSC80N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology
Datasheet: OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF , OST90N65HM2F , SGT50T65FD1PT , OSC90N65HF , RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF .
History: OST80N65H4EMF
Keywords - OSC80N65HF transistor datasheet
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History: OST80N65H4EMF
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