OSC80N65HF Datasheet. Specs and Replacement

Type Designator: OSC80N65HF  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 250 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 114 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 112 nS

Coesⓘ - Output Capacitance, typ: 2978 pF

Package: TO247

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OSC80N65HF datasheet

 ..1. Size:743K  oriental semi
 osc80n65hf.pdf pdf_icon

OSC80N65HF

OSC80N65HF Enhancement Mode N-Channel Power IGBT General Description OSC80N65HF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology ... See More ⇒

Specs: OST75N65HTNF, OST75N65HZF, OST80N65H4EMF, OST80N65HEMF, OST80N65HEVF, OST80N65HSMF, OST90N60HCZF, OST90N65HM2F, G50T65D, OSC90N65HF, RJH3047, GT30F123, GT30J127, OST50N65HEWF, OST50N65KEW2F, OST60N65H4EMF, OST60N65H4EWF

Keywords - OSC80N65HF transistor spec

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