All IGBT. OSC80N65HF Datasheet

 

OSC80N65HF IGBT. Datasheet pdf. Equivalent


   Type Designator: OSC80N65HF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 250
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 114
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 112
   Collector Capacity (Cc), typ, pF: 2978
   Total Gate Charge (Qg), typ, nC: 179
   Package: TO247

 OSC80N65HF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OSC80N65HF Datasheet (PDF)

 ..1. Size:743K  oriental semi
 osc80n65hf.pdf

OSC80N65HF OSC80N65HF

OSC80N65HF Enhancement Mode N-Channel Power IGBT General Description OSC80N65HF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technology

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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