SGT15U65SD1F Specs and Replacement
Type Designator: SGT15U65SD1F
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 42 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 49 pF
Package: TO220F
SGT15U65SD1F Substitution - IGBT ⓘ Cross-Reference Search
SGT15U65SD1F datasheet
sgt15u65sd1f sgt15u65sd1fd.pdf
SGT15U65SD1F(FD) 15A 650V C 2 SGT15U65SD1F(FD) 4 1 G Plus Field Stop IV+ UPS SMPS PFC 3 E 15A 650V VCE(sat)( )=1.6V@IC... See More ⇒
sgt15t60sd1t sgt15t60sd1f sgt15t60sd1str.pdf
SGT15T60SD1T/F/S 15A 600V C 2 SGT15T60SD1T/F/S 1 Field Stop III G UPS,SMPS PFC 1 3 3 TO-263-2L E 15A 600V VCE ... See More ⇒
Specs: OST80N65HEWF, SGT10T60SD1S, SGT10T60SD1F, SGT10T60SDM1D, SGT10T60SDM1P7, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR, MBQ50T65FDSC, SGT15U65SD1FD, SGT20T135QR1P7, SGT20T135QR1PN, SGT20T135QR1PT, SGT20T60SD1F, SGT20T60SD1S, SGT20T60SD1P7, SGT20T60SD1FD
Keywords - SGT15U65SD1F transistor spec
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