SGT20T60SD1S Datasheet and Replacement
Type Designator: SGT20T60SD1S
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO263
- IGBT Cross-Reference
SGT20T60SD1S Datasheet (PDF)
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SGT20T60SD1F(S)(P7)(FD)(PN) 20A600V C 21SGT20T60SD1F(S)(P7)(FD)(PN)(T)GField Stop III1 UPSSMPS PFC 323TO-3PE 13
sgt20t60sdm1p7.pdf
SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A
sgt20t135qr1p7 sgt20t135qr1pn sgt20t135qr1pt.pdf
SGT20T135QR1P7(PN)(PT) 20A1350V C 2SGT20T135QR1P7/PN/PT 1Reverse ConductingG
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75J120U6HN | 2SH29
Keywords - SGT20T60SD1S transistor datasheet
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History: MMG75J120U6HN | 2SH29
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