SGT50T65SDM1P7 Specs and Replacement
Type Designator: SGT50T65SDM1P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 133 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Package: TO247
SGT50T65SDM1P7 Substitution - IGBTⓘ Cross-Reference Search
SGT50T65SDM1P7 datasheet
sgt50t65sdm1p7.pdf
SGT50T65SDM1P7 50A 650V C 2 SGT50T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.65V@IC=50A ... See More ⇒
sgt50t65fd1pn sgt50t65fd1p7.pdf
SGT50T65FD1PN/P7 50A 650V C 2 SGT50T65FD1PN/P7 1 Field Stop IV G UPS,SMPS PFC 3 E 50A 650V VCE(sat)( )=2.0... See More ⇒
Specs: SGT20T60SD1T, SGT30T60SDM1P7, SGT30T60SD3PU, SGT40N60F2P7, SGT40N60FD1P7, SGT40N60FD2PT, SGT40T120SDB4P7, SGT40U120FD1P7, CRG40T60AK3HD, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, SGT75T65SDM1P4, SGT75T65SDM1P7, SGTP30V60FD2PU
Keywords - SGT50T65SDM1P7 transistor spec
SGT50T65SDM1P7 cross reference
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SGT50T65SDM1P7 replacement
History: SGT40N60FD1P7
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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