SGT75T65SDM1P4 Specs and Replacement
Type Designator: SGT75T65SDM1P4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 416 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO247-4L
SGT75T65SDM1P4 Substitution - IGBT ⓘ Cross-Reference Search
SGT75T65SDM1P4 datasheet
sgt75t65sdm1p7.pdf
SGT75T65SDM1P7 75A 650V C 2 SGT75T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 75A 650V VCE(sat)( )=1.65V@IC=75A ... See More ⇒
Specs: SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, RJH60F7BDPQ-A0, SGT75T65SDM1P7, SGTP30V60FD2PU, SGTP40V120F2P7, SGTP40V120FDB2P7, SGTP40V60FD2PU, SGTP40V60SD2PF, SGTP40V65FDR1P7, SGTP40V65SDB1P7
Keywords - SGT75T65SDM1P4 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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