SGTP30V60FD2PU Datasheet. Specs and Replacement

Type Designator: SGTP30V60FD2PU  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 395 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 22 nS

Coesⓘ - Output Capacitance, typ: 41 pF

Package: TO247N

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SGTP30V60FD2PU datasheet

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SGTP30V60FD2PU

SGTP30V60FD2PU 30A 600V C 2 SGTP30V60FD2PU 1 G Field Stop 5 UPS SMPS PFC 3 E 30A 600V VCE(sat)( )=1.65V@IC=30A ... See More ⇒

Specs: SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, SGT75T65SDM1P4, SGT75T65SDM1P7, IKW30N60H3, SGTP40V120F2P7, SGTP40V120FDB2P7, SGTP40V60FD2PU, SGTP40V60SD2PF, SGTP40V65FDR1P7, SGTP40V65SDB1P7, SGTP50T120FDB4PWA, SGTP50V60FD2PF

Keywords - SGTP30V60FD2PU transistor spec

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