SGTP30V60FD2PU Datasheet and Replacement
Type Designator: SGTP30V60FD2PU
Type: IGBT + Anti-Parallel Diode
Marking Code: P30V60FD2
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 41 pF
Qg ⓘ - Total Gate Charge, typ: 75 nC
Package: TO247N
SGTP30V60FD2PU substitution
SGTP30V60FD2PU Datasheet (PDF)
sgtp30v60fd2pu.pdf
SGTP30V60FD2PU 30A600V C 2SGTP30V60FD2PU 1GField Stop 5UPSSMPS PFC 3E 30A600VVCE(sat)( )=1.65V@IC=30A
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: SGTP40V65FDR1P7 | SGTP50V65FD2PU
Keywords - SGTP30V60FD2PU transistor datasheet
SGTP30V60FD2PU cross reference
SGTP30V60FD2PU equivalent finder
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SGTP30V60FD2PU replacement
History: SGTP40V65FDR1P7 | SGTP50V65FD2PU
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