SGTP30V60FD2PU IGBT. Datasheet pdf. Equivalent

   Type Designator: SGTP30V60FD2PU
   Type: IGBT + Anti-Parallel Diode
   Marking Code: P30V60FD2
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 22 nS
   Coesⓘ - Output Capacitance, typ: 41 pF
   Qgⓘ - Total Gate Charge, typ: 75 nC
   Package: TO247N

SGTP30V60FD2PU Transistor Equivalent Substitute - IGBT Cross-Reference Search