SGTP30V60FD2PU Datasheet and Replacement
Type Designator: SGTP30V60FD2PU
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 41 pF
Package: TO247N
SGTP30V60FD2PU substitution
SGTP30V60FD2PU Datasheet (PDF)
sgtp30v60fd2pu.pdf
SGTP30V60FD2PU 30A600V C 2SGTP30V60FD2PU 1GField Stop 5UPSSMPS PFC 3E 30A600VVCE(sat)( )=1.65V@IC=30A
Datasheet: SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 , SGT75T65SDM1P4 , SGT75T65SDM1P7 , YGW40N65F1 , SGTP40V120F2P7 , SGTP40V120FDB2P7 , SGTP40V60FD2PU , SGTP40V60SD2PF , SGTP40V65FDR1P7 , SGTP40V65SDB1P7 , SGTP50T120FDB4PWA , SGTP50V60FD2PF .
History: SPT40N120T1BT8TL
Keywords - SGTP30V60FD2PU transistor datasheet
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History: SPT40N120T1BT8TL
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