SGTP40V65FDR1P7 PDF and Equivalents Search

 

SGTP40V65FDR1P7 Specs and Replacement

Type Designator: SGTP40V65FDR1P7

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 63 pF

Package: TO247

 SGTP40V65FDR1P7 Substitution

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SGTP40V65FDR1P7 datasheet

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SGTP40V65FDR1P7

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SGTP40V65FDR1P7

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SGTP40V65FDR1P7

SGTP40V60SD2PF 40A 600V C 2 SGTP40V60SD2PF 1 G Field Stop 5 UPS SMPS PFC 3 E 40A 600V VCE(sat)( )=1.35V@IC=40A ... See More ⇒

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SGTP40V65FDR1P7

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Specs: SGT70N65FDM1P7, SGT75T65SDM1P4, SGT75T65SDM1P7, SGTP30V60FD2PU, SGTP40V120F2P7, SGTP40V120FDB2P7, SGTP40V60FD2PU, SGTP40V60SD2PF, TGAN20N135FD, SGTP40V65SDB1P7, SGTP50T120FDB4PWA, SGTP50V60FD2PF, SGTP50V60FD2PU, SGTP50V60SD2PF, SGTP50V65FD2PU, SGTP50V65FDB1P7, SGTP50V65SDB1P7

Keywords - SGTP40V65FDR1P7 transistor spec

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