SGTP50V65UF1P7 PDF and Equivalents Search

 

SGTP50V65UF1P7 PDF Specs and Replacement


   Type Designator: SGTP50V65UF1P7
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 273 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   tr ⓘ - Rise Time, typ: 43 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Package: TO247
 

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SGTP50V65UF1P7 PDF specs

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SGTP50V65UF1P7

SGTP50V65UF1P7 50A 650V C 2 SGTP50V65UF1P7 1 G Field Stop 5 UPS SMPS PFC 3 E 50A 650V VCE(sat)( )=1.60V@IC=50A ... See More ⇒

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SGTP50V65UF1P7

SGTP50V65UFCR3P7 50A 650V C 2 SGTP50V65UFCR3P7 1 G Field Stop 5 OBC PFC 3 E 50A 650V VCE(sat)( )=1.60V@IC=5... See More ⇒

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SGTP50V65UF1P7

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SGTP50V65UF1P7

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Specs: SGTP40V65SDB1P7 , SGTP50T120FDB4PWA , SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF , SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , FGH30S130P , SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 .

Keywords - SGTP50V65UF1P7 transistor spec

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