SGTP75V65FDB1P7 Specs and Replacement

Type Designator: SGTP75V65FDB1P7

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 395 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 44 nS

Coesⓘ - Output Capacitance, typ: 132 pF

Package: TO247

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SGTP75V65FDB1P7 datasheet

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SGTP75V65FDB1P7

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Specs: SGTP50V65SDB1P7, SGTP50V65UF1P7, SGTP50V65UFCR3P7, SGTP5T60SD1DTR, SGTP5T60SD1STR, SGTP75V120FDB2PW, SGTP75V120FDB2PW4, SGTP75V65FDB1P4B, GT60N321, SGTP75V65SDB1P7, SGTP75V65SDS1P7, SGTQ160V65SDB1APW, SGTQ160V65SDB1APWA, SGTQ200V75SDB1PWA, SGTQ200V75SDB1PWD, SGTQ30NE40I1DTR, SGTQ40T120SDB2P7

Keywords - SGTP75V65FDB1P7 transistor spec

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