SGTP75V65FDB1P7 Datasheet and Replacement
Type Designator: SGTP75V65FDB1P7
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 132 pF
Package: TO247
- IGBT Cross-Reference
SGTP75V65FDB1P7 Datasheet (PDF)
sgtp75v65fdb1p7.pdf

SGTP75V65FDB1P7 75A650V C 2SGTP75V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A
sgtp75v65fdb1p4b.pdf

SGTP75V65FDB1P4B 75A650V C1SGTP75V65FDB1P4B Field Stop 5 4GUPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A
sgtp75v65sds1p7.pdf

SGTP75V65SDS1P7 75A650V C 2SGTP75V65SDS1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
sgtp75v65sdb1p7.pdf

SGTP75V65SDB1P7 75A650V C 2SGTP75V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: SPT40N120F1AT8TL | IXBP5N160G | BLG15T65FUL-P | APT20GF120BRDQ1G | 2MBI200NB-120 | BM63763S-VC | FD400R33KF2C
Keywords - SGTP75V65FDB1P7 transistor datasheet
SGTP75V65FDB1P7 cross reference
SGTP75V65FDB1P7 equivalent finder
SGTP75V65FDB1P7 lookup
SGTP75V65FDB1P7 substitution
SGTP75V65FDB1P7 replacement
History: SPT40N120F1AT8TL | IXBP5N160G | BLG15T65FUL-P | APT20GF120BRDQ1G | 2MBI200NB-120 | BM63763S-VC | FD400R33KF2C



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