SGTP75V65SDB1P7 PDF and Equivalents Search

 

SGTP75V65SDB1P7 PDF Specs and Replacement


   Type Designator: SGTP75V65SDB1P7
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
   tr ⓘ - Rise Time, typ: 39 nS
   Coesⓘ - Output Capacitance, typ: 131 pF
   Package: TO247
 

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SGTP75V65SDB1P7 PDF specs

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SGTP75V65SDB1P7

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SGTP75V65SDB1P7

SGTP75V65FDB1P4B 75A 650V C 1 SGTP75V65FDB1P4B Field Stop 5 4 G UPS SMPS PFC 3 2 E 75A 650V VCE(sat)( )=1.65V@IC=75A ... See More ⇒

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Specs: SGTP50V65UF1P7 , SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , CRG75T65AK5HD , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D .

Keywords - SGTP75V65SDB1P7 transistor spec

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