IXGM17N100A Datasheet and Replacement
Type Designator: IXGM17N100A
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 34 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 4(max) V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 200 nS
Coesⓘ - Output Capacitance, typ: 175 pF
Package: TO204
IXGM17N100A substitution
IXGM17N100A Datasheet (PDF)
ixgm17n100a.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C
ixgm17n100.pdf
VCES IC25 VCE(sat)Low VCE(sat) IGBT IXGH/IXGM 17 N100 1000 V 34 A 3.5 VHigh speed IGBT IXGH/IXGM 17 N100A 1000 V 34 A 4.0 VSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 1000 VVCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C34 AIC90 TC = 90C17 A TO-204 AE (IXGM)ICM TC = 25C
Datasheet: IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , XNF15N60T , IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 .
History: IXST15N120B
Keywords - IXGM17N100A transistor datasheet
IXGM17N100A cross reference
IXGM17N100A equivalent finder
IXGM17N100A lookup
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IXGM17N100A replacement
History: IXST15N120B
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