All IGBT. SIW30N60G21B Datasheet

 

SIW30N60G21B Datasheet and Replacement


   Type Designator: SIW30N60G21B
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 170 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 82 pF
   Package: TO247
 

 SIW30N60G21B substitution

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SIW30N60G21B Datasheet (PDF)

 ..1. Size:1095K  cn super semi
 sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf pdf_icon

SIW30N60G21B

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

 7.1. Size:1094K  cn super semi
 sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf pdf_icon

SIW30N60G21B

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

Datasheet: SL20T65FL , SL20T65FL1 , SL20T65K1 , SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , SIP30N60G21B , GT50JR22 , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 .

History: FGH60N60UFDTU-F085 | VS-GA200SA60UP

Keywords - SIW30N60G21B transistor datasheet

 SIW30N60G21B cross reference
 SIW30N60G21B equivalent finder
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 SIW30N60G21B substitution
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