SIW30N60G21B IGBT. Datasheet pdf. Equivalent
Type Designator: SIW30N60G21B
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 170
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 41
Collector Capacity (Cc), typ, pF: 82
Total Gate Charge (Qg), typ, nC: 60
Package: TO247
SIW30N60G21B Transistor Equivalent Substitute - IGBT Cross-Reference Search
SIW30N60G21B Datasheet (PDF)
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf
SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ