SIP30N65G21F Datasheet and Replacement
Type Designator: SIP30N65G21F
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 170 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 82 pF
Qgⓘ - Total Gate Charge, typ: 60 nC
Package: TO220
SIP30N65G21F Datasheet (PDF)
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th
Datasheet: SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , MBQ60T65PES , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ .
History: NGTB15N60S1EG
Keywords - SIP30N65G21F transistor datasheet
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History: NGTB15N60S1EG



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