All IGBT. SIP30N65G21F Datasheet

 

SIP30N65G21F IGBT. Datasheet pdf. Equivalent


   Type Designator: SIP30N65G21F
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 170
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 41
   Collector Capacity (Cc), typ, pF: 82
   Package: TO220

 SIP30N65G21F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SIP30N65G21F Datasheet (PDF)

 ..1. Size:1094K  cn super semi
sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf

SIP30N65G21F
SIP30N65G21F

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor650V Trench and Super Junction IGBTSI*30N65G21FRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N65G21F/SIP30N65G21F/SIW30N65G21F/SIB30N65G21F650V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 650 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

 7.1. Size:1095K  cn super semi
sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf

SIP30N65G21F
SIP30N65G21F

SUPER-SEMISuper Junction Insulated Gate Bipolar Transistor600V Trench and Super Junction IGBTSI*30N60G21BRev. 0.91Jul. 2023www.supersemi.com.cnSIF30N60G21B/SIP30N60G21B/SIW30N60G21B/SIB30N60G21B600V Trench and Super Junction IGBTGeneral DescriptionSuper-Semi Trench and Super Junction IGBTs,VCE 600 Vdesigned according to the super junction (SJ)IC 30 Atechnology. Th

Datasheet: SL20T65F1 , SL25T120FL , SL40T65FL1 , SIF30N60G21B , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , FGPF4536 , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ .

 

 
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