JT010N065SED Specs and Replacement
Type Designator: JT010N065SED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 136 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO-263
JT010N065SED Substitution - IGBT ⓘ Cross-Reference Search
JT010N065SED datasheet
Specs: KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , RJP30H1DPD , JT010N065CED , JT010N065FED , JT010N065WED , JT015N065SED , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED .
History: ATT060U060EQ
Keywords - JT010N065SED transistor spec
JT010N065SED cross reference
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History: ATT060U060EQ
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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