All IGBT. JT010N065SED Datasheet

 

JT010N065SED Datasheet and Replacement


   Type Designator: JT010N065SED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 136 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qg ⓘ - Total Gate Charge, typ: 27.4 nC
   Package: TO-263
 

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JT010N065SED Datasheet (PDF)

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JT010N065SED

N N-CHANNEL IGBT RJT010N065SED/CED/FED/WED Package MAIN CHARACTERISTICS I 10 A CBV 650V CESVCESAT-typ 1.5V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 Motor Control FEATURES

Datasheet: KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , BT40T60ANF , JT010N065CED , JT010N065FED , JT010N065WED , JT015N065SED , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED .

History: STGW30H60DFB

Keywords - JT010N065SED transistor datasheet

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