JT010N065FED IGBT. Datasheet pdf. Equivalent
Type Designator: JT010N065FED
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 37 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Qgⓘ - Total Gate Charge, typ: 27.4 nC
Package: TO-220MF
JT010N065FED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT010N065FED Datasheet (PDF)
jt010n065sed jt010n065ced jt010n065fed jt010n065wed.pdf
N N-CHANNEL IGBT RJT010N065SED/CED/FED/WED Package MAIN CHARACTERISTICS I 10 A CBV 650V CESVCESAT-typ 1.5V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 Motor Control FEATURES
Datasheet: ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED , JT010N065CED , IKW75N60T , JT010N065WED , JT015N065SED , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED .
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