JT010N065FED Datasheet and Replacement
Type Designator: JT010N065FED
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 37 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO-220MF
- IGBT Cross-Reference
JT010N065FED Datasheet (PDF)
jt010n065sed jt010n065ced jt010n065fed jt010n065wed.pdf

N N-CHANNEL IGBT RJT010N065SED/CED/FED/WED Package MAIN CHARACTERISTICS I 10 A CBV 650V CESVCESAT-typ 1.5V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 Motor Control FEATURES
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MG25Q6ES51 | 7MBR75U2B060
Keywords - JT010N065FED transistor datasheet
JT010N065FED cross reference
JT010N065FED equivalent finder
JT010N065FED lookup
JT010N065FED substitution
JT010N065FED replacement
History: MG25Q6ES51 | 7MBR75U2B060



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