JT010N065FED Specs and Replacement
Type Designator: JT010N065FED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 37 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO-220MF
JT010N065FED Substitution - IGBTⓘ Cross-Reference Search
JT010N065FED datasheet
Specs: ATT030N065EQ, ATT040K065EQ, ATT040N120EQ, ATT050K065FQC, ATT060U060EQ, ATT075N065EQ, JT010N065SED, JT010N065CED, FGA60N65SMD, JT010N065WED, JT015N065SED, JT015N065CED, JT015N120F7PD1E, JT020N065SED, JT020N065CED, JT020N065WED, JT020N065FED
Keywords - JT010N065FED transistor spec
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History: SGS23N60UFD | AIKB20N60CT
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