All IGBT. JT010N065WED Datasheet

 

JT010N065WED Datasheet and Replacement


   Type Designator: JT010N065WED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 166 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qgⓘ - Total Gate Charge, typ: 27.4 nC
   Package: TO-247
      - IGBT Cross-Reference

 

JT010N065WED Datasheet (PDF)

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JT010N065WED

N N-CHANNEL IGBT RJT010N065SED/CED/FED/WED Package MAIN CHARACTERISTICS I 10 A CBV 650V CESVCESAT-typ 1.5V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 Motor Control FEATURES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 7MBP100VDA060-50 | MITB10WB1200TMH | BSM300GA170DLC | MMIX4B22N300 | STGBL6NC60DI

Keywords - JT010N065WED transistor datasheet

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