JT010N065WED Specs and Replacement
Type Designator: JT010N065WED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 166 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 20 nS
Coesⓘ - Output Capacitance, typ: 60 pF
Package: TO-247
JT010N065WED Substitution - IGBTⓘ Cross-Reference Search
JT010N065WED datasheet
Specs: ATT040K065EQ, ATT040N120EQ, ATT050K065FQC, ATT060U060EQ, ATT075N065EQ, JT010N065SED, JT010N065CED, JT010N065FED, SGT50T65FD1PN, JT015N065SED, JT015N065CED, JT015N120F7PD1E, JT020N065SED, JT020N065CED, JT020N065WED, JT020N065FED, JT020N135WED
Keywords - JT010N065WED transistor spec
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History: JT05N065FED | IXXH50N60C3 | AOK40B65HQ3 | NCE40TD60BP | STGD5H60DF | RJH1CD6DPQ-E0 | NCE40TD120VTP
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