All IGBT. JT010N065WED Datasheet

 

JT010N065WED Datasheet and Replacement


   Type Designator: JT010N065WED
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 166 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 20 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO-247
 

 JT010N065WED substitution

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JT010N065WED Datasheet (PDF)

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JT010N065WED

N N-CHANNEL IGBT RJT010N065SED/CED/FED/WED Package MAIN CHARACTERISTICS I 10 A CBV 650V CESVCESAT-typ 1.5V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 Motor Control FEATURES

Datasheet: ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED , JT010N065CED , JT010N065FED , GT30G124 , JT015N065SED , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED , JT020N135WED .

History: IKZ75N65EH5 | APT33GF120BRG | APT15GT60BRDQ1G | APT25GP90BG | IRGS4B60KD1PBF | APTGF75DH120T | MUBW100-06A8

Keywords - JT010N065WED transistor datasheet

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