JT015N065SED Specs and Replacement
Type Designator: JT015N065SED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 182 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 96.5 pF
Package: TO-263
JT015N065SED Substitution - IGBT ⓘ Cross-Reference Search
JT015N065SED datasheet
jt015n065fed.pdf
N N-CHANNEL IGBT R JT015N065FED MAIN CHARACTERISTICS Package IC 15 A VCES 650V Vcesat-typ 1.6V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,... See More ⇒
jt015n120f7pd1e.pdf
IGBT IGBT Modules R IGBT JT015N120F7PD1E MAIN CHARACTERISTICS Package IC 15A 1200V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology ... See More ⇒
Specs: ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED , JT010N065CED , JT010N065FED , JT010N065WED , GT30F126 , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED , JT020N135WED , JT030N065AED .
Keywords - JT015N065SED transistor spec
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