JT015N065SED Datasheet and Replacement
Type Designator: JT015N065SED
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 182 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 96.5 pF
Package: TO-263
JT015N065SED substitution
JT015N065SED Datasheet (PDF)
jt015n065fed jt015n065sed jt015n065ced.pdf

N N-CHANNEL IGBT RJT015N065FED/SED/CED MAIN CHARACTERISTICS Package IC 15 A VCES 650V VCESAT-TY 1.6V VGE=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge
jt015n065fed.pdf

N N-CHANNEL IGBT RJT015N065FED MAIN CHARACTERISTICS Package IC 15 A VCES 650V Vcesat-typ 1.6V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,
jt015n120f7pd1e.pdf

IGBT IGBT Modules RIGBT JT015N120F7PD1E MAIN CHARACTERISTICS Package IC 15A 1200V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
Datasheet: ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED , JT010N065CED , JT010N065FED , JT010N065WED , RJP63F3DPP-M0 , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED , JT020N135WED , JT030N065AED .
History: DGW50N65BTH | NGTB40N60L2
Keywords - JT015N065SED transistor datasheet
JT015N065SED cross reference
JT015N065SED equivalent finder
JT015N065SED lookup
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History: DGW50N65BTH | NGTB40N60L2



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