JT015N065CED Specs and Replacement
Type Designator: JT015N065CED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 182 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 96.5 pF
Package: TO-220C
JT015N065CED Substitution - IGBTⓘ Cross-Reference Search
JT015N065CED datasheet
jt015n065fed.pdf
N N-CHANNEL IGBT R JT015N065FED MAIN CHARACTERISTICS Package IC 15 A VCES 650V Vcesat-typ 1.6V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,... See More ⇒
jt015n120f7pd1e.pdf
IGBT IGBT Modules R IGBT JT015N120F7PD1E MAIN CHARACTERISTICS Package IC 15A 1200V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology ... See More ⇒
Specs: ATT050K065FQC, ATT060U060EQ, ATT075N065EQ, JT010N065SED, JT010N065CED, JT010N065FED, JT010N065WED, JT015N065SED, IHW20N120R3, JT015N120F7PD1E, JT020N065SED, JT020N065CED, JT020N065WED, JT020N065FED, JT020N135WED, JT030N065AED, JT030N065F6MD1E
Keywords - JT015N065CED transistor spec
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History: F3L300R12PT4_B26 | RJH1CD7DPQ-A0 | BG150B12UY3-I | IXXH75N60B3D1 | AOD6B65MQ1E | AFGY120T65SPD | AFGHL75T65SQ
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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