JT020N065SED IGBT. Datasheet pdf. Equivalent
Type Designator: JT020N065SED
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 187 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 56 nS
Coesⓘ - Output Capacitance, typ: 128 pF
Qgⓘ - Total Gate Charge, typ: 43.9 nC
Package: TO-263
JT020N065SED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT020N065SED Datasheet (PDF)
jt020n065sed jt020n065ced jt020n065wed jt020n065fed.pdf
N N-CHANNEL IGBT RJT020N065SED/CED/WED/FED MAIN CHARACTERISTICS Package I 20 A CBV 650V CESVCESAT-typ 1.6V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 FEATURES TO-220C Low gate charge Trenc
jt020n135wed.pdf
N N-CHANNEL IGBT R JT020N135WED MAIN CHARACTERISTICS Package IC 20 A VCES 1350V VCESAT-TYPVGE=15V 1.7V APPLICATIONS IH Induction heating(IH) Inverterized microwave ovens Soft switching applications FEATURES
Datasheet: ATT075N065EQ , JT010N065SED , JT010N065CED , JT010N065FED , JT010N065WED , JT015N065SED , JT015N065CED , JT015N120F7PD1E , FGH60N60SFD , JT020N065CED , JT020N065WED , JT020N065FED , JT020N135WED , JT030N065AED , JT030N065F6MD1E , JT030N065F7PD1E , JT030N065WED .
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