JT020N065FED PDF and Equivalents Search

 

JT020N065FED Specs and Replacement

Type Designator: JT020N065FED

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 42 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 56 nS

Coesⓘ - Output Capacitance, typ: 128 pF

Package: TO-220MF

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JT020N065FED datasheet

 ..1. Size:2704K  jilin sino
 jt020n065sed jt020n065ced jt020n065wed jt020n065fed.pdf pdf_icon

JT020N065FED

N N-CHANNEL IGBT R JT020N065SED/CED/WED/FED MAIN CHARACTERISTICS Package I 20 A C BV 650V CES V CESAT-typ 1.6V V =15V GE APPLICATIONS General purpose inverters UPS UPS TO-263 FEATURES TO-220C Low gate charge Trenc... See More ⇒

 8.1. Size:978K  jilin sino
 jt020n135wed.pdf pdf_icon

JT020N065FED

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Specs: JT010N065FED, JT010N065WED, JT015N065SED, JT015N065CED, JT015N120F7PD1E, JT020N065SED, JT020N065CED, JT020N065WED, IRG7IC28U, JT020N135WED, JT030N065AED, JT030N065F6MD1E, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED

Keywords - JT020N065FED transistor spec

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