JT030N065FED IGBT. Datasheet pdf. Equivalent
Type Designator: JT030N065FED
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 46 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 67 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Qgⓘ - Total Gate Charge, typ: 64.5 nC
Package: TO-220MF
JT030N065FED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT030N065FED Datasheet (PDF)
jt030n065wed jt030n065fed jt030n065sed.pdf
N N-CHANNEL IGBT RJT030N065WED/FED/SED MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.75V VCESAT-TYP APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench F
jt030n065f7pd1e.pdf
IGBT IGBT Modules RIGBT JT030N065F7PD1E MAIN CHARACTERISTICS Package IC 30A 650V V CESVcesat_typ1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
jt030n065f6md1e.pdf
IGBT IGBT Modules RIGBT JT030N065F6MD1E MAIN CHARACTERISTICS Package IC 30A 650V V CESVcesat_typ1.75V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology
jt030n065aed.pdf
N N-CHANNEL IGBT RJT030N065AED MAIN CHARACTERISTICS Package I 30A CV 650V CESV -TYP 1.5V CE satAPPLICATIONS General purpose inverters UPS UPS E FEATURES C G Low gate charge TO-3PH Trench FS Trench
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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