All IGBT. JT040K065AED Datasheet

 

JT040K065AED Datasheet and Replacement


   Type Designator: JT040K065AED
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 108 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 84 nS
   Coesⓘ - Output Capacitance, typ: 193 pF
   Package: TO-3PH
      - IGBT Cross-Reference

 

JT040K065AED Datasheet (PDF)

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JT040K065AED

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - JT040K065AED transistor datasheet

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