All IGBT. JT040K065AED Datasheet

 

JT040K065AED IGBT. Datasheet pdf. Equivalent


   Type Designator: JT040K065AED
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 108 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 84 nS
   Coesⓘ - Output Capacitance, typ: 193 pF
   Package: TO-3PH

 JT040K065AED Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT040K065AED Datasheet (PDF)

 ..1. Size:1783K  jilin sino
 jt040k065wed jt040k065aed.pdf

JT040K065AED JT040K065AED

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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