JT040K065AED Specs and Replacement
Type Designator: JT040K065AED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 108 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 84 nS
Coesⓘ - Output Capacitance, typ: 193 pF
Package: TO-3PH JT040K065AED Substitution - IGBT ⓘ Cross-Reference Search
JT040K065AED datasheet
jt040k065wed jt040k065aed.pdf
N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15V APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench... See More ⇒
Specs: JT020N135WED, JT030N065AED, JT030N065F6MD1E, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED, RJH30E2DPP, JT050K120F2MA1E, JT050N065WED, JT050N120F2MA1E, JT050N120GPED, JT05N065RAD, JT05N065VAD, JT05N065SAD, JT05N065RED
Keywords - JT040K065AED transistor spec
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History: NCE30TD60BT | SKM150GB174D | IXXK200N60C3 | HGT1S7N60A4S9A | IXSH15N120BD1 | STGB8NC60KD | JT05N065RAD
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