JT05N065RAD PDF and Equivalents Search

 

JT05N065RAD Specs and Replacement

Type Designator: JT05N065RAD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 59.5 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 5 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 13 nS

Coesⓘ - Output Capacitance, typ: 32.7 pF

Package: DPAK

 JT05N065RAD Substitution

- IGBTⓘ Cross-Reference Search

 

JT05N065RAD datasheet

 ..1. Size:1562K  jilin sino
 jt05n065rad jt05n065vad jt05n065sad.pdf pdf_icon

JT05N065RAD

N N-CHANNEL IGBT R JT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15V APPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech... See More ⇒

 5.1. Size:2071K  jilin sino
 jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf pdf_icon

JT05N065RAD

N N-CHANNEL IGBT R JT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V Vcesat Vge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology ... See More ⇒

Specs: JT030N065FED, JT030N065SED, JT040K065WED, JT040K065AED, JT050K120F2MA1E, JT050N065WED, JT050N120F2MA1E, JT050N120GPED, NGD8201N, JT05N065VAD, JT05N065SAD, JT05N065RED, JT05N065SED, JT05N065FED, JT05N065CED, JT075K120F2MA1E, JT075N065GHED

Keywords - JT05N065RAD transistor spec

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