JT075N120F2MA1E IGBT. Datasheet pdf. Equivalent
Type Designator: JT075N120F2MA1E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 85 nS
Coesⓘ - Output Capacitance, typ: 500 pF
Package: MODULE
JT075N120F2MA1E Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT075N120F2MA1E Datasheet (PDF)
jt075n120f2ma1e.pdf
IGBT IGBT Modules RIGBT JT075N120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno
jt075n120gped.pdf
N N-CHANNEL IGBT RJT075N120GPED MAIN CHARACTERISTICS Package IC 75A VCE 1200V Vcesat-typ 1.9V APPLICATIONS General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS product Ro
jt075n065wed.pdf
N N-CHANNEL IGBT RJT075N065WED MAIN CHARACTERISTICS Package IC 75A VCES 650V Vcesat-typ 1.75V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,
jt075n065ghed.pdf
N N-CHANNEL IGBT RJT075N065GHED MAIN CHARACTERISTICS Package IC 75A VCE 650V Vcesat-typ 1.7V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology RoHS
Datasheet: JT05N065VAD , JT05N065SAD , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , IKW50N60H3 , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE .
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