JT600N065F2MH1E Datasheet and Replacement
Type Designator: JT600N065F2MH1E
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1800 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 249 nS
Coesⓘ - Output Capacitance, typ: 7380 pF
Package: MODULE
- IGBT Cross-Reference
JT600N065F2MH1E Datasheet (PDF)
jt600n065f2mh1e.pdf

N N-CHANNEL IGBT RIGBT JT600N065F2MH1E MAIN CHARACTERISTICS Package IC 600 A 650 V V CESVcesat_typ1.55V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt600n120f2mh1e.pdf

N N-CHANNEL IGBT RIGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt600n120f2mhte.pdf

N N-CHANNEL IGBT RIGBT JT600N120F2MHTE MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
Datasheet: JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , TGD30N40P , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ .
History: MMG100J060U | IXST35N120B | DIM250PLM33-TL | MSG100D350FHS | RJH60A85RDPP-M0 | MSG20T65HPT1 | MSG40T120FQC
Keywords - JT600N065F2MH1E transistor datasheet
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History: MMG100J060U | IXST35N120B | DIM250PLM33-TL | MSG100D350FHS | RJH60A85RDPP-M0 | MSG20T65HPT1 | MSG40T120FQC



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