JT600N065F2MH1E PDF and Equivalents Search

 

JT600N065F2MH1E Specs and Replacement

Type Designator: JT600N065F2MH1E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1800 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 600 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 249 nS

Coesⓘ - Output Capacitance, typ: 7380 pF

Package: MODULE

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JT600N065F2MH1E datasheet

 0.1. Size:1205K  jilin sino
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JT600N065F2MH1E

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 8.1. Size:499K  jilin sino
 jt600n120f2mh1e.pdf pdf_icon

JT600N065F2MH1E

N N-CHANNEL IGBT R IGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CES Vcesat_typ 1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES ... See More ⇒

 8.2. Size:1156K  jilin sino
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JT600N065F2MH1E

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Specs: JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , IKW30N60H3 , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ .

History: HIA30N140IH-DA | ISL9V5045S3ST-F085

Keywords - JT600N065F2MH1E transistor spec

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