JT600N120F2MHTE Datasheet and Replacement
Type Designator: JT600N120F2MHTE
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3650 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 82 nS
Coesⓘ - Output Capacitance, typ: 3700 pF
Qgⓘ - Total Gate Charge, typ: 4000 nC
Package: MODULE
- IGBT Cross-Reference
JT600N120F2MHTE Datasheet (PDF)
jt600n120f2mhte.pdf

N N-CHANNEL IGBT RIGBT JT600N120F2MHTE MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt600n120f2mh1e.pdf

N N-CHANNEL IGBT RIGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt600n065f2mh1e.pdf

N N-CHANNEL IGBT RIGBT JT600N065F2MH1E MAIN CHARACTERISTICS Package IC 600 A 650 V V CESVcesat_typ1.55V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: HGT1Y40N60A4D | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | IKW50N65WR5 | IXBF22N300 | CRG15T120BK3SD
Keywords - JT600N120F2MHTE transistor datasheet
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History: HGT1Y40N60A4D | CM1400DU-24NF | JNG75T65HYU2 | TT050K065FQ | IKW50N65WR5 | IXBF22N300 | CRG15T120BK3SD



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