JT600N120F2MHTE IGBT. Datasheet pdf. Equivalent
Type Designator: JT600N120F2MHTE
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 3650 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 600 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 82 nS
Coesⓘ - Output Capacitance, typ: 3700 pF
Qgⓘ - Total Gate Charge, typ: 4000 nC
Package: MODULE
JT600N120F2MHTE Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT600N120F2MHTE Datasheet (PDF)
jt600n120f2mhte.pdf
N N-CHANNEL IGBT RIGBT JT600N120F2MHTE MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt600n120f2mh1e.pdf
N N-CHANNEL IGBT RIGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
jt600n065f2mh1e.pdf
N N-CHANNEL IGBT RIGBT JT600N065F2MH1E MAIN CHARACTERISTICS Package IC 600 A 650 V V CESVcesat_typ1.55V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES
Datasheet: JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , SGP30N60 , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ .
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