JT600N120F2MHTE Specs and Replacement
Type Designator: JT600N120F2MHTE
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 3650 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 600 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
tr ⓘ - Rise Time, typ: 82 nS
Coesⓘ - Output Capacitance, typ: 3700 pF
Package: MODULE JT600N120F2MHTE Substitution - IGBT ⓘ Cross-Reference Search
JT600N120F2MHTE datasheet
jt600n120f2mh1e.pdf
N N-CHANNEL IGBT R IGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CES Vcesat_typ 1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES ... See More ⇒
Specs: JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , FGH75T65UPD , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ .
History: SGS13N60UFD
Keywords - JT600N120F2MHTE transistor spec
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JT600N120F2MHTE replacement
History: SGS13N60UFD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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