All IGBT. TT010N120EI Datasheet

 

TT010N120EI Datasheet and Replacement


   Type Designator: TT010N120EI
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 176 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 18.7 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Package: TO-247
 

 TT010N120EI substitution

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TT010N120EI Datasheet (PDF)

 ..1. Size:550K  jilin sino
 tt010n120ei.pdf pdf_icon

TT010N120EI

N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 4.1. Size:1472K  jilin sino
 tt010n120eq.pdf pdf_icon

TT010N120EI

N N-CHANNEL IGBT R TT010N120EQ MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 8.1. Size:1017K  jilin sino
 tt010n060eq.pdf pdf_icon

TT010N120EI

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SIGC03T60SNC | APT64GA90B | VS-GT300YH120N | BSM75GD60DLC | FGAF40N60SMD | BSM300GAR120DLC | IRGC16B120KB

Keywords - TT010N120EI transistor datasheet

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