TT010N120EI PDF and Equivalents Search

 

TT010N120EI Specs and Replacement

Type Designator: TT010N120EI

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 176 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 18.7 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: TO-247

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TT010N120EI datasheet

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TT010N120EI

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 tt010n120eq.pdf pdf_icon

TT010N120EI

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 8.1. Size:1017K  jilin sino
 tt010n060eq.pdf pdf_icon

TT010N120EI

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15V APPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren... See More ⇒

Specs: JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , IKW40T120 , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI .

History: VS-GB150LH120N | TT025N120EQ | YGW50N65F1A | SIGC03T60SNC | STGW50HF60SD | STGWA40H65FB

Keywords - TT010N120EI transistor spec

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