IXGN50N60BD2 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGN50N60BD2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 50 nS
Coesⓘ - Output Capacitance, typ: 290 pF
Qgⓘ - Total Gate Charge, typ: 110 nC
Package: SOT227B
IXGN50N60BD2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGN50N60BD2 Datasheet (PDF)
ixgn50n60bd3 ixgn50n60bd2.pdf
IXGN 50N60BD2 VCES = 600 VHiPerFASTTM IGBTIXGN 50N60BD3 IC25 = 75 Awith HiPerFREDVCE(sat) = 2.5 Vtfi = 150 nsBuck & boost configurations...BD2 ...BD3Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE 1534321VCES TJ = 25C to 150C 600 V2VCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 V4IC25 TC = 25C75 A3IC90
ixgn50n60b.pdf
HiPerFASTTM IGBT IXGN 50N60B VCES = 600 V IC25 = 75 A VCE(sat) = 2.3 Vtfi(typ) = 120nsPreliminary data sheetESymbol Test Conditions Maximum RatingsSOT-227B miniBLOCE153432E VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C75 ACIC90 TC = 90C50 AG = Gate, C = Collector
ixgn50n120c3h1.pdf
Advance Technical InformationVCES = 1200VGenX3TM 1200VIXGN50N120C3H1IC110 = 50AIGBT w/ DiodeVCE(sat) 4.2VHigh-Speed PT IGBT for20-50 kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 1200 VGVCGR TJ = 25C to 150C, RGE = 1M 1200 VVGES Continuous 20 VVGEM Transient 30 VE
Datasheet: IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IKW40N65WR5 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C , IXGP12N60CD1 .
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