All IGBT. TT025U120EQ Datasheet

 

TT025U120EQ IGBT. Datasheet pdf. Equivalent


   Type Designator: TT025U120EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 312.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 58 nS
   Coesⓘ - Output Capacitance, typ: 143 pF
   Qgⓘ - Total Gate Charge, typ: 91.8 nC
   Package: TO-247

 TT025U120EQ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TT025U120EQ Datasheet (PDF)

 ..1. Size:1650K  jilin sino
 tt025u120eq.pdf

TT025U120EQ TT025U120EQ

N N-CHANNEL IGBT R TT025U120EQ MAIN CHARACTERISTICS Package IC 25 A VCES 1200V Vcesat-typ 2.3V Vge=15VAPPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,

 9.1. Size:1318K  jilin sino
 tt025n120fq.pdf

TT025U120EQ TT025U120EQ

N N-CHANNEL IGBT R TT025N120FQ MAIN CHARACTERISTICS Package IC 25 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS produ

 9.2. Size:2026K  jilin sino
 tt025n120eq.pdf

TT025U120EQ TT025U120EQ

N N-CHANNEL IGBT RTT025N120EQ MAIN CHARACTERISTICS Package 25A IC 1200V VCE 1.50V VCESAT-typ APPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS product

Datasheet: TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , YGW40N65F1A1 , TT030K065EQ , TT030N065EI , TT030U065FBA , TT030U065FQ , TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ .

 

 
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