TT030K065EQ Datasheet and Replacement
Type Designator: TT030K065EQ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 234 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 52 nS
Coesⓘ - Output Capacitance, typ: 139 pF
Qgⓘ - Total Gate Charge, typ: 66 nC
Package: TO-247
- IGBT Cross-Reference
TT030K065EQ Datasheet (PDF)
tt030k065eq.pdf

N N-CHANNEL IGBT RTT030K065EQ MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.7V VCESAT-TYP APPLICATIONS PFC Power factor corrector (PFC) UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS
tt030u065fba.pdf

N N-CHANNEL IGBT RTT030U065FBA MAIN CHARACTERISTICS Package IC 30A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS RoHS product
tt030n065ei.pdf

N N-CHANNEL IGBT RTT030N065EI MAIN CHARACTERISTICS Package I 30A CV 650V CESV -TYP 1.7V CE satAPPLICATIONS White electricity field E FEATURES C G Low gate charge TO-3PH Trench FS Trench FS Technology RoHS
tt030u065fq.pdf

N N-CHANNEL IGBT RTT030U065FQ MAIN CHARACTERISTICS Package IC 30A VCE 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC Energy Storage TO-263 FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
Datasheet: TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , MGD623S , TT030N065EI , TT030U065FBA , TT030U065FQ , TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ , TT050K065FQ .
History: IXGT20N120B | APT40GP60BG
Keywords - TT030K065EQ transistor datasheet
TT030K065EQ cross reference
TT030K065EQ equivalent finder
TT030K065EQ lookup
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History: IXGT20N120B | APT40GP60BG



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