TT030U065FBA Datasheet and Replacement
Type Designator: TT030U065FBA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 319 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 107 pF
Qgⓘ - Total Gate Charge, typ: 62 nC
Package: TO-247
- IGBT Cross-Reference
TT030U065FBA Datasheet (PDF)
tt030u065fba.pdf

N N-CHANNEL IGBT RTT030U065FBA MAIN CHARACTERISTICS Package IC 30A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS RoHS product
tt030u065fq.pdf

N N-CHANNEL IGBT RTT030U065FQ MAIN CHARACTERISTICS Package IC 30A VCE 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC Energy Storage TO-263 FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
tt030n065ei.pdf

N N-CHANNEL IGBT RTT030N065EI MAIN CHARACTERISTICS Package I 30A CV 650V CESV -TYP 1.7V CE satAPPLICATIONS White electricity field E FEATURES C G Low gate charge TO-3PH Trench FS Trench FS Technology RoHS
tt030k065eq.pdf

N N-CHANNEL IGBT RTT030K065EQ MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.7V VCESAT-TYP APPLICATIONS PFC Power factor corrector (PFC) UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS
Datasheet: TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI , IRGB20B60PD1 , TT030U065FQ , TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ , TT050K065FQ , TT050U065FB , TT050U065FBC .
History: AOTF5B65M2 | MMG300D120B6UC
Keywords - TT030U065FBA transistor datasheet
TT030U065FBA cross reference
TT030U065FBA equivalent finder
TT030U065FBA lookup
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History: AOTF5B65M2 | MMG300D120B6UC



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