All IGBT. TT030U065FBA Datasheet

 

TT030U065FBA Datasheet and Replacement


   Type Designator: TT030U065FBA
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 319 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 44 nS
   Coesⓘ - Output Capacitance, typ: 107 pF
   Package: TO-247
 

 TT030U065FBA substitution

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TT030U065FBA Datasheet (PDF)

 ..1. Size:1324K  jilin sino
 tt030u065fba.pdf pdf_icon

TT030U065FBA

N N-CHANNEL IGBT RTT030U065FBA MAIN CHARACTERISTICS Package IC 30A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS RoHS product

 4.1. Size:1033K  jilin sino
 tt030u065fq.pdf pdf_icon

TT030U065FBA

N N-CHANNEL IGBT RTT030U065FQ MAIN CHARACTERISTICS Package IC 30A VCE 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector PFC Energy Storage TO-263 FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS

 9.1. Size:1641K  jilin sino
 tt030n065ei.pdf pdf_icon

TT030U065FBA

N N-CHANNEL IGBT RTT030N065EI MAIN CHARACTERISTICS Package I 30A CV 650V CESV -TYP 1.7V CE satAPPLICATIONS White electricity field E FEATURES C G Low gate charge TO-3PH Trench FS Trench FS Technology RoHS

 9.2. Size:1002K  jilin sino
 tt030k065eq.pdf pdf_icon

TT030U065FBA

N N-CHANNEL IGBT RTT030K065EQ MAIN CHARACTERISTICS Package 30 A IC 650V VCES 1.7V VCESAT-TYP APPLICATIONS PFC Power factor corrector (PFC) UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS

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History: SKM150GAL12V

Keywords - TT030U065FBA transistor datasheet

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