TT060U060EQ Datasheet and Replacement
Type Designator: TT060U060EQ
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 454 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 96 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Package: TO-3PH
- IGBT Cross-Reference
TT060U060EQ Datasheet (PDF)
tt060u060eq.pdf

N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCES 600V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC Air Condition FEATURES Low gate charge Trench FS
att060u060eq.pdf

N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech
tt060u065fq.pdf

N N-CHANNEL IGBT RTT060U065FQ MAIN CHARACTERISTICS Package IC 60A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
tt060u065fb.pdf

N N-CHANNEL IGBT RTT060U065FB MAIN CHARACTERISTICS Package IC 60A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75J120U6HN | 2SH29
Keywords - TT060U060EQ transistor datasheet
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History: MMG75J120U6HN | 2SH29



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