TT060U065FB IGBT. Datasheet pdf. Equivalent
Type Designator: TT060U065FB
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 535
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 80
Collector Capacity (Cc), typ, pF: 213
Total Gate Charge (Qg), typ, nC: 128
Package: TO-247
TT060U065FB Transistor Equivalent Substitute - IGBT Cross-Reference Search
TT060U065FB Datasheet (PDF)
tt060u065fb.pdf
N N-CHANNEL IGBT RTT060U065FB MAIN CHARACTERISTICS Package IC 60A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
tt060u065fq.pdf
N N-CHANNEL IGBT RTT060U065FQ MAIN CHARACTERISTICS Package IC 60A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
tt060u060eq.pdf
N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCES 600V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC Air Condition FEATURES Low gate charge Trench FS
att060u060eq.pdf
N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech
Datasheet: TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ , TT050K065FQ , TT050U065FB , TT050U065FBC , TT060U060EQ , CRG60T60AK3HD , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , , .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ