TT060U065FQ Specs and Replacement
Type Designator: TT060U065FQ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 80 nS
Coesⓘ - Output Capacitance, typ: 213 pF
Package: TO-247
TT060U065FQ Substitution - IGBT ⓘ Cross-Reference Search
TT060U065FQ datasheet
tt060u060eq.pdf
N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCES 600V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC Air Condition FEATURES Low gate charge Trench FS ... See More ⇒
att060u060eq.pdf
N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech... See More ⇒
Specs: TT040U060EQ , TT040U065FB , TT040U120EQ , TT050K065FQ , TT050U065FB , TT050U065FBC , TT060U060EQ , TT060U065FB , IXRH40N120 , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , BRG60N60D , BRGB6N65DP .
Keywords - TT060U065FQ transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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