NCE100ED65VT4 PDF and Equivalents Search

 

NCE100ED65VT4 Specs and Replacement

Type Designator: NCE100ED65VT4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 606 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 206 pF

Package: TO-247-4L

 NCE100ED65VT4 Substitution

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NCE100ED65VT4 datasheet

 ..1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED65VT4

NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒

 2.1. Size:1092K  ncepower
 nce100ed65vtp4.pdf pdf_icon

NCE100ED65VT4

NCE100ED65VTP4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC ... See More ⇒

 2.2. Size:1166K  ncepower
 nce100ed65vt.pdf pdf_icon

NCE100ED65VT4

NCE100ED65VT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = ... See More ⇒

 2.3. Size:1179K  ncepower
 nce100ed65vtp.pdf pdf_icon

NCE100ED65VT4

NCE100ED65VTP 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒

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Specs: BRG10N120D , BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , CRG40T65AK5HD , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , NCE100ED75VTP4 , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 .

Keywords - NCE100ED65VT4 transistor spec

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