NCE100ED75VTP4 Specs and Replacement
Type Designator: NCE100ED75VTP4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 606 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 46 nS
Coesⓘ - Output Capacitance, typ: 203 pF
Package: TO-247P-4L NCE100ED75VTP4 Substitution - IGBT ⓘ Cross-Reference Search
NCE100ED75VTP4 datasheet
nce100ed75vtp4.pdf
NCE100ED75VTP4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC ... See More ⇒
nce100ed75vt4.pdf
NCE100ED75VT4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =... See More ⇒
nce100ed75vt.pdf
NCE100ED75VT 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = ... See More ⇒
nce100ed65vt4.pdf
NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒
Specs: NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , MBQ60T65PES , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP , NCE120ED120VTP4 , NCE15T60BD , NCE15TD120BD , NCE15TD120LP .
History: NCE100TD120VTP
Keywords - NCE100ED75VTP4 transistor spec
NCE100ED75VTP4 cross reference
NCE100ED75VTP4 equivalent finder
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History: NCE100TD120VTP
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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