NCE100ED75VTP4 Даташит. Аналоги. Параметры и характеристики.
Наименование: NCE100ED75VTP4
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 606 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 750 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 46 nS
Coesⓘ - Выходная емкость, типовая: 203 pF
Тип корпуса: TO-247P-4L
Аналог (замена) для NCE100ED75VTP4
NCE100ED75VTP4 Datasheet (PDF)
nce100ed75vtp4.pdf

NCE100ED75VTP4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC
nce100ed75vt4.pdf

NCE100ED75VT4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =
nce100ed75vt.pdf

NCE100ED75VT750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =
nce100ed65vt4.pdf

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =
Другие IGBT... NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , GT30J124 , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP , NCE120ED120VTP4 , NCE15T60BD , NCE15TD120BD , NCE15TD120LP .



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