NCE100TD120VTP Specs and Replacement
Type Designator: NCE100TD120VTP
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 937 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 17 nS
Coesⓘ - Output Capacitance, typ: 425 pF
Package: TO-247P NCE100TD120VTP Substitution
- IGBT ⓘ Cross-Reference Search
NCE100TD120VTP datasheet
..1. Size:1617K ncepower
nce100td120vtp.pdf 
Pb Free Product NCE100TD120VTP 1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switchin... See More ⇒
0.1. Size:1856K ncepower
nce100td120vtp4.pdf
Pb Free Product NCE100TD120VTP4 1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switchi... See More ⇒
3.1. Size:1550K ncepower
nce100td120btp.pdf
Pb Free Product NCE100TD120BTP 1200V, 100A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed switchin... See More ⇒
8.1. Size:1119K ncepower
nce100ed65vt4.pdf
NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒
8.2. Size:780K ncepower
nce100ed65bt.pdf
NCE100ED65BT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = ... See More ⇒
8.3. Size:1092K ncepower
nce100ed65vtp4.pdf
NCE100ED65VTP4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC ... See More ⇒
8.4. Size:1166K ncepower
nce100ed65vt.pdf
NCE100ED65VT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = ... See More ⇒
8.5. Size:738K ncepower
nce100ed65bt4.pdf
NCE100ED65BT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC =... See More ⇒
8.6. Size:742K ncepower
nce100ed75vtp4.pdf
NCE100ED75VTP4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC ... See More ⇒
8.7. Size:764K ncepower
nce100ed75vt4.pdf
NCE100ED75VT4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =... See More ⇒
8.8. Size:811K ncepower
nce100ed75vt.pdf
NCE100ED75VT 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = ... See More ⇒
8.9. Size:1179K ncepower
nce100ed65vtp.pdf
NCE100ED65VTP 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =... See More ⇒
Specs: NCE100ED65VT
, NCE100ED65VT4
, NCE100ED65VTP
, NCE100ED65VTP4
, NCE100ED75VT
, NCE100ED75VT4
, NCE100ED75VTP4
, NCE100TD120BTP
, GT30J124
, NCE100TD120VTP4
, NCE120ED120VTP
, NCE120ED120VTP4
, NCE15T60BD
, NCE15TD120BD
, NCE15TD120LP
, NCE15TD120LT
, NCE15TD135LP
.
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