NCE100TD120VTP - аналоги и даташиты транзистора IGBT

 

NCE100TD120VTP - Даташиты. Аналоги. Основные параметры


   Наименование: NCE100TD120VTP
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 937 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.7 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 17 nS
   Coesⓘ - Выходная емкость, типовая: 425 pF
   Тип корпуса: TO-247P
 

 Аналог (замена) для NCE100TD120VTP

   - подбор ⓘ IGBT транзистора по параметрам

 

NCE100TD120VTP Datasheet (PDF)

 ..1. Size:1617K  ncepower
 nce100td120vtp.pdf pdf_icon

NCE100TD120VTP

Pb Free ProductNCE100TD120VTP1200V, 100A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switchin

 0.1. Size:1856K  ncepower
 nce100td120vtp4.pdf pdf_icon

NCE100TD120VTP

Pb Free ProductNCE100TD120VTP41200V, 100A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switchi

 3.1. Size:1550K  ncepower
 nce100td120btp.pdf pdf_icon

NCE100TD120VTP

Pb Free ProductNCE100TD120BTP1200V, 100A, Trench FS II Fast IGBTGeneral DescriptionUsing NCE's proprietary trench design and advanced FS (Field Stop) secondgeneration technology, the 1200V Trench FSII IGBT offers superior conduction andswitching performances, and easy parallel operation;Features Trench FSII Technology Offering Very low VCE(sat) High speed switchin

 8.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100TD120VTP

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

ПОКАЗАТЬ ЕЩЁ

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History: SKM195GAR063DN | JT050N120F2MA1E | NCE30TD65BD | NCE20TH60BF | SMBH1G50US120 | MSG30T65FHT | 6MBP30VAA060-50

 

 
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