NCE160ED65VTP PDF and Equivalents Search

 

NCE160ED65VTP Specs and Replacement

Type Designator: NCE160ED65VTP

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 789 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 320 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 64 nS

Coesⓘ - Output Capacitance, typ: 320 pF

Package: TO247

 NCE160ED65VTP Substitution

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NCE160ED65VTP datasheet

 ..1. Size:1569K  ncepower
 nce160ed65vtp.pdf pdf_icon

NCE160ED65VTP

NCE160ED65VTP 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC... See More ⇒

 0.1. Size:1532K  ncepower
 nce160ed65vtp4.pdf pdf_icon

NCE160ED65VTP

NCE160ED65VTP4 650V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ I... See More ⇒

 6.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE160ED65VTP

NCE160ED120VTP4 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 16... See More ⇒

 6.2. Size:1602K  ncepower
 nce160ed120vtp.pdf pdf_icon

NCE160ED65VTP

NCE160ED120VTP 1200V, 160A, Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench FS Gen.7 Technology Offering Low saturation voltage V = 1.6V(Typ.) @ IC = 160... See More ⇒

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Specs: NCE15TD135LT, NCE15TD60BP, NCE15TD60BT, NCE15TD65BF, NCE15TD65BP, NCE15TD65BT, NCE160ED120VTP, NCE160ED120VTP4, SGT50T65FD1PN, NCE160ED65VTP4, NCE20TD60BP, NCE20TD60BT, NCE20TD65BD, NCE20TH60BF, NCE25TC120HD, NCE25TD120BD, NCE25TD120LP

Keywords - NCE160ED65VTP transistor spec

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