All IGBT. NCE160ED65VTP Datasheet

 

NCE160ED65VTP Datasheet and Replacement


   Type Designator: NCE160ED65VTP
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 789 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 320 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 64 nS
   Coesⓘ - Output Capacitance, typ: 320 pF
   Package: TO247
      - IGBT Cross-Reference

 

NCE160ED65VTP Datasheet (PDF)

 ..1. Size:1569K  ncepower
 nce160ed65vtp.pdf pdf_icon

NCE160ED65VTP

NCE160ED65VTP650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

 0.1. Size:1532K  ncepower
 nce160ed65vtp4.pdf pdf_icon

NCE160ED65VTP

NCE160ED65VTP4650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ I

 6.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE160ED65VTP

NCE160ED120VTP41200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 16

 6.2. Size:1602K  ncepower
 nce160ed120vtp.pdf pdf_icon

NCE160ED65VTP

NCE160ED120VTP1200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 160

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MMG300D120B6TC

Keywords - NCE160ED65VTP transistor datasheet

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