All IGBT. NCE160ED65VTP Datasheet

 

NCE160ED65VTP Datasheet and Replacement


   Type Designator: NCE160ED65VTP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 789 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 320 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 64 nS
   Coesⓘ - Output Capacitance, typ: 320 pF
   Qg ⓘ - Total Gate Charge, typ: 270 nC
   Package: TO247
 

 NCE160ED65VTP substitution

   - IGBT ⓘ Cross-Reference Search

 

NCE160ED65VTP Datasheet (PDF)

 ..1. Size:1569K  ncepower
 nce160ed65vtp.pdf pdf_icon

NCE160ED65VTP

NCE160ED65VTP650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

 0.1. Size:1532K  ncepower
 nce160ed65vtp4.pdf pdf_icon

NCE160ED65VTP

NCE160ED65VTP4650V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ I

 6.1. Size:1560K  ncepower
 nce160ed120vtp4.pdf pdf_icon

NCE160ED65VTP

NCE160ED120VTP41200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 16

 6.2. Size:1602K  ncepower
 nce160ed120vtp.pdf pdf_icon

NCE160ED65VTP

NCE160ED120VTP1200V, 160A, Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench FS Gen.7 Technology Offering Low saturation voltage: V = 1.6V(Typ.) @ IC = 160

SHOW MORE

Datasheet: NCE15TD135LT , NCE15TD60BP , NCE15TD60BT , NCE15TD65BF , NCE15TD65BP , NCE15TD65BT , NCE160ED120VTP , NCE160ED120VTP4 , GT30G124 , NCE160ED65VTP4 , NCE20TD60BP , NCE20TD60BT , NCE20TD65BD , NCE20TH60BF , NCE25TC120HD , NCE25TD120BD , NCE25TD120LP .

History: IXGR64N60A3 | JT05N065SAD

Keywords - NCE160ED65VTP transistor datasheet

 NCE160ED65VTP cross reference
 NCE160ED65VTP equivalent finder
 NCE160ED65VTP lookup
 NCE160ED65VTP substitution
 NCE160ED65VTP replacement

 

 
Back to Top

 


 
.