NCE40ED75VT Specs and Replacement
Type Designator: NCE40ED75VT
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 245 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
tr ⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 64 pF
Package: TO247
NCE40ED75VT Substitution - IGBTⓘ Cross-Reference Search
NCE40ED75VT datasheet
nce40ed75vt.pdf
NCE40ED75VT 750V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 40... See More ⇒
nce40ed65bt.pdf
NCE40ED65BT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.50V(Typ.) @ IC = 40... See More ⇒
nce40ed65vt.pdf
NCE40ED65VT 650V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 40... See More ⇒
nce40ed120vtp.pdf
NCE40ED120VTP 1200V 40A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage V = 1.65V(Typ.) @ IC ... See More ⇒
Specs: NCE30TD65BD, NCE30TD65BP, NCE30TD65BT, NCE40ED120VT, NCE40ED120VTP, NCE40ED65BF, NCE40ED65BT, NCE40ED65VT, CRG15T120BNR3S, NCE40ER65BP, NCE40ER65BPF, NCE40ER65BT, NCE40EU65UT, NCE40T120VT, NCE40T120WD, NCE40T60BP, NCE40TD120LP
Keywords - NCE40ED75VT transistor spec
NCE40ED75VT cross reference
NCE40ED75VT equivalent finder
NCE40ED75VT lookup
NCE40ED75VT substitution
NCE40ED75VT replacement
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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