Справочник IGBT. NCE40ED75VT

 

NCE40ED75VT - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: NCE40ED75VT
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 750 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 23 nS
   Coesⓘ - Выходная емкость, типовая: 64 pF
   Qgⓘ - Общий заряд затвора, typ: 81 nC
   Тип корпуса: TO247

 Аналог (замена) для NCE40ED75VT

 

 

NCE40ED75VT Datasheet (PDF)

 ..1. Size:780K  ncepower
 nce40ed75vt.pdf

NCE40ED75VT NCE40ED75VT

NCE40ED75VT750V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC = 40

 7.1. Size:783K  ncepower
 nce40ed65bt.pdf

NCE40ED75VT NCE40ED75VT

NCE40ED65BT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

 7.2. Size:1119K  ncepower
 nce40ed65vt.pdf

NCE40ED75VT NCE40ED75VT

NCE40ED65VT650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 40

 7.3. Size:1203K  ncepower
 nce40ed120vtp.pdf

NCE40ED75VT NCE40ED75VT

NCE40ED120VTP1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC

 7.4. Size:1189K  ncepower
 nce40ed120vt.pdf

NCE40ED75VT NCE40ED75VT

NCE40ED120VT1200V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 1200V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation;Features Trench Field Stop Gen.7 Technology Offering Low saturation voltage: V = 1.65V(Typ.) @ IC =

 7.5. Size:704K  ncepower
 nce40ed65bf.pdf

NCE40ED75VT NCE40ED75VT

NCE40ED65BF650V 40A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.50V(Typ.) @ IC = 40

Другие IGBT... NCE30TD65BD , NCE30TD65BP , NCE30TD65BT , NCE40ED120VT , NCE40ED120VTP , NCE40ED65BF , NCE40ED65BT , NCE40ED65VT , SGH80N60UFD , NCE40ER65BP , NCE40ER65BPF , NCE40ER65BT , NCE40EU65UT , NCE40T120VT , NCE40T120WD , NCE40T60BP , NCE40TD120LP .

 

 
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