NCE75ED75VT PDF and Equivalents Search

 

NCE75ED75VT PDF Specs and Replacement


   Type Designator: NCE75ED75VT
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 402 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Package: TO247
 

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NCE75ED75VT PDF specs

 ..1. Size:799K  ncepower
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NCE75ED75VT

NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75... See More ⇒

 0.1. Size:752K  ncepower
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NCE75ED75VT

NCE75ED75VT4 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 7... See More ⇒

 7.1. Size:1082K  ncepower
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NCE75ED75VT

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

 7.2. Size:1129K  ncepower
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NCE75ED75VT

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75... See More ⇒

Specs: NCE75ED120VT , NCE75ED120VT4 , NCE75ED120VTP , NCE75ED120VTP4 , NCE75ED65BT , NCE75ED65VT , NCE75ED65VT4 , NCE75ED65VTP , BT60T60ANFK , NCE75ED75VT4 , NCE75EU65UT , NCE75T120VT , NCE75TD120BT , NCE75TD120BT4 , NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT .

Keywords - NCE75ED75VT transistor spec

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