NCE75ED75VT4 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

NCE75ED75VT4 Specs and Replacement

   Type Designator: NCE75ED75VT4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 402 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   tr ⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Qg ⓘ - Total Gate Charge, typ: 158 nC
   Package: TO-247-4L

NCE75ED75VT4 Substitution

- IGBT ⓘ Cross-Reference Search

NCE75ED75VT4 datasheet

..1. Size:752K ncepower
nce75ed75vt4.pdf pdf_icon

NCE75ED75VT4 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 7... See More ⇒

3.1. Size:799K ncepower
nce75ed75vt.pdf pdf_icon

NCE75ED75VT 750V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC = 75... See More ⇒

7.1. Size:1082K ncepower
nce75ed65vt4.pdf pdf_icon

NCE75ED65VT4 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 7... See More ⇒

7.2. Size:1129K ncepower
nce75ed65vt.pdf pdf_icon

NCE75ED65VT 650V 75A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC = 75... See More ⇒