All IGBT. NCE75ED75VT4 Datasheet

 

NCE75ED75VT4 Datasheet and Replacement


   Type Designator: NCE75ED75VT4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 402 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 27 nS
   Coesⓘ - Output Capacitance, typ: 155 pF
   Package: TO-247-4L
      - IGBT Cross-Reference

 

NCE75ED75VT4 Datasheet (PDF)

 ..1. Size:752K  ncepower
 nce75ed75vt4.pdf pdf_icon

NCE75ED75VT4

NCE75ED75VT4750V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC = 7

 3.1. Size:799K  ncepower
 nce75ed75vt.pdf pdf_icon

NCE75ED75VT4

NCE75ED75VT750V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC = 75

 7.1. Size:1082K  ncepower
 nce75ed65vt4.pdf pdf_icon

NCE75ED75VT4

NCE75ED65VT4650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 7

 7.2. Size:1129K  ncepower
 nce75ed65vt.pdf pdf_icon

NCE75ED75VT4

NCE75ED65VT650V 75A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC = 75

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History: FF1200R17KE3_B2 | SPT25N120F1A1T8TL

Keywords - NCE75ED75VT4 transistor datasheet

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